wide band rf power transistor

Place of Origin:MALAYSIA

Brand Name:ERICSSON

Model Number:PTB20245

... Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / PHS repeaters, trunk amplifiers, tower ...

Brand Name:VBE

Model Number:VBP10-13GL

Place of Origin:China

...Band , Low Noise Amplifier , LNA , RF Power Amplifier Module VBE RF Amplifier Module Introductions : VBE Provide solutions of RF module including radio frequency signal source,radio frequency power amplifier(PA),low noise amplifier(LNA), Radio Frequency outdoor unit(ODU) and customized radio frequency module solution,the frequency band cover P-wave band,L-wave band,S-wave band,Ku-wave band and Ka-wave band...

Brand Name:Silicon Labs

Model Number:SI4703-C19-GMR

Place of Origin:Multi-origin

...RF Power Transistor Product Description: The SI4703-C19-GMR is an advanced RF power transistor designed using a high-voltage BiCMOS process. This device is suitable for high-power, high-efficiency, and low-noise applications in the HF and VHF bands. It features a wide bandwidth, high output power, and low noise figure. The SI4703-C19-GMR is suitable for use in a variety of RF applications including RF amplifiers, RF power

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　

Brand Name:SWT

Model Number:SW-PA-05002700-54C

Place of Origin:China

...Power Linear Amplifier Module Device 500-2700MHz L Band RF Power Amplifier Enhances Signal Strength for Base Stations Product Overview This 250W RF power amplifier is designed to operate within the frequency range of 500-2700MHz, providing high-power amplification for a wide...

Brand Name:Texin

Model Number:TEXIN-50W

Place of Origin:Guang Dong china

...wide band RF 50W power amplifier signal booster for anti drone solution product Introduction This wide band 50 W power amplifier jammer module is no signal source ,the wide band support customized .The 50w power amplifer weight 709g ,When you testing under 24-28V,the power reach 50W.And this power amplifier has stable band...

Brand Name:INNOTION

Model Number:YP01401650T

Place of Origin:Jiangsu, China

...RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor...

Brand Name:Original Factory

Model Number:DW3720TR13

Place of Origin:CN

Wireless Communication Module DW3720TR13 Ultra-Wide Band RF Transceiver IC Product Description Of DW3720TR13 DW3720TR13 is a low-power ultra-wide band RF transceiver. Product Photo Of DW3720TR13 Other Supply Product Types Part Number Package ...

Brand Name:Semelab / TT Electronics

Model Number:D2085UK

Place of Origin:UK

...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power

Brand Name:Original brand

Model Number:STWA65N60DM6

Place of Origin:Original

Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely high dv/dt • Optimized body diode...

Brand Name:Texas Instruments

Model Number:PD85035S-E

Place of Origin:Malaysia

PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates...

Brand Name:NXP

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Brand Name:lenolink

Model Number:4 way power splitter

Place of Origin:China

4way Power splitter 5G 689MHz- 3800MHz with N-Female connector :PIM-150dBc Performance 1. VSWR :1.2 2. Very easy to install 3. Frequency :698-3800MHz 4. Used in 5G indoor single coverage Packaging & Delivery Packaging Details 1 piece in one plastic bag 2 ...

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Place of Origin:China

Brand Name:ChingKong

Model Number:Signal Jamming Device

High Power Signal Jammer Home- Products - High Power Signal Jammer High Power 6 Bands Drone UAVS Jammer Indoor Use with Output Power 80W,Jamming up to 200m Item No.: CKJ-1602D6-D The one is professional and good quality Middle RF power Drone Jammer model...

Brand Name:Vinncom

Model Number:VN-HC2x2-15001-ON-xxx

Place of Origin:china

Product Description: The RF Hybrid Coupler is a crucial component designed for applications requiring effective signal splitting and combining in radio frequency systems. This high-quality coupler provides exceptional performance with a directivity of 20 ...

Brand Name:Hua Xuan Yang

Model Number:AOD442

Place of Origin:ShenZhen China

AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. Parameters Part Number ...

Model Number:SD1480

Place of Origin:Malaysia

Brand Name:KAIGENG

SD1480 N/A Electronic Components IC MCU Microcontroller Integrated Circuits SD1480 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Model Number:2SK4115

Place of Origin:Guangdong, China

Brand Name:ALL BRAND

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Brand Name:Anterwell

Model Number:2SC1972

Place of Origin:original factory

NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972 DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • Replaces Original 2SC1972 in ...