silicon power transistor low leakage

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:MMBD1501A

MMBD1501A LOW LEAKAGE DIODE SOT-23 Plastic-Encapsulate Diodes FEATURE  Low Leakage  High Conductance Marking :A11 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Typical Characterisitics ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:MMBD1501A

MMBD1501A LOW LEAKAGE DIODE SOT-23 Plastic-Encapsulate Diodes FEATURE  Low Leakage  High Conductance Marking :A11 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Typical Characterisitics ...

Brand Name:Original brand

Model Number:NTMFS5H419NLT1G

Place of Origin:Original

...Power Transistor NTMFS5H419NLT1G MOSFET T8 40V Low Coss SMD/SMT Feature • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant Categories MOSFET T8 40V LOW COSS NTMFS5H419NLT1G Transistor Polarity N-Channel Channel No. 1 Channel Leakage...

Brand Name:Anterwell

Model Number:2N6038

Place of Origin:original factory

Plastic Darlington complementary power mosfet , Silicon Power Transistors 2N6038 Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications. • High DC Current Gain — hFE...

Place of Origin:PHILIPPINE

Brand Name:ON Semiconductor

Model Number:BUV21G

... VOLTS − 250 WATTS Applications: • High DC Current Gain: hFE min = 20 at IC = 12 A • Low VCE(sat), VCE(sat) max = 0.6 V at IC = 8 A • Very Fast Switching Times: TF max = 0.4 [1]s at IC = 25 A • Pb−Free ...

Model Number:2N6038

Place of Origin:original factory

Plastic DarliCM GROUPon complementary power mosfet , Silicon Power Transistors 2N6038 Plastic DarliCM GROUPon complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications. • High DC Current ...

Categories:RF Transistors

Country/Region:china

...Series 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS Category Transistor Mfr Motololar Series - Part Status - Mounting Type - The MJ13333 transistor is designed for high voltage, high–speed, power switching in inductive circuits where ...

Brand Name:Greenfair

Model Number:EFD series

Place of Origin:China

EER Series EER35 vertical type high frequency transformer low leakage inductance, excellent winding EER Transformer Quick Details Place of Origin: Guangdong, China (Mainland) Brand Name: Greenfair, GFE, GE Model Number: EER16/15, EER25/18, EER25/27, EER26...

Brand Name:Vishay Siliconix

Model Number:SI7469DP-T1-GE3

Place of Origin:Multi-origin

Product Listing: SI7469DP-T1-GE3 N-Channel PowerTrench® MOSFET Features: * Low On-Resistance * Low Input Capacitance and Gate Charge * Fast Switching * Low Threshold * 100% UIL Tested Specifications: * Drain-Source Voltage (VDS): 60V * Drain Current (ID...

Brand Name:Infineon Technologies

Model Number:IRF3205PBF

Place of Origin:Original

...Silicon Npn Power Transistors 55V 110A 8.0mΩ Power MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power...

Brand Name:Infineon

Model Number:IRF5210PBF

Place of Origin:Original Factory

...Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power...

Brand Name:Huixin

Model Number:DB107S

Place of Origin:China

...Silicon Bridge Rectifier Low Reverse Leakage Molded Plastic Body DB101S~DB107S DBS Datasheet.pdf Feature The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Idea for printed circuit board Glass passivated Junction chip Low reverse leakage...

Brand Name:Mitsubishi

Model Number:RA03M8087M-101

Place of Origin:JP

... in the 806 to 870-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to

Brand Name:original

Model Number:PBSS4160T,215

Place of Origin:Original Manufacturer

...LOW VCESAT MOSFET POWER TRANSISTOR PNP COMPLEMENT PBSS4160T Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: NPN Mounting Type: Surface Mount Package: SOT23 High Light: n channel mosfet transistor , n channel transistor PBSS4160T NPN low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low...

Brand Name:QingZhu

Model Number:MYG3-20K420

Place of Origin:Xian,China

20K 420 Metal Oxide Varistor PWB MOV Features Epoxy Resin Coating Silicone Resin Coating Low Leakage Current RoHS Compliant Applications Power Supplies Home Electrical Appliances Industrial Devices Surge Protectors Series Part No. Varistor Voltage Max. ...

Brand Name:Shareway

Model Number:750314783

Place of Origin:Guangdong China

...Low leakage inductance Power Over Ethernet Transformers Characteristics Optimized for PoE applications Low leakage inductance Low resistance Low profile High saturation current Output voltages of 5V, 12V and 24V Isolation Voltage: up to 2400V Up to 90W output power Custom designs available Applications PoE power supplies Security cameras Commercial and public information displays IP phones WLAN access points High power...

Brand Name:NEC

Model Number:2SC2987

Place of Origin:JAPAN

2SC2987 NPN PNP Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2Collector;...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... Description: Silicon Carbide Metal Oxide Semiconductor Field Effect Transistor (SiC MOSFETs) are an advanced type of power device, with high efficiency and excellent performance. SiC MOSFETs feature low on-resistance and high power capabilities, enabling...

Brand Name:Original Factory

Model Number:MSC060SMA070B4

Place of Origin:CN

...Transistors in a TO-247 4-lead package with a source sense. Specification Of MSC060SMA070B4 Part Number: MSC060SMA070B4 Technology: SiC Mounting Style: Through Hole Package / Case: TO-247-4 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds -

Brand Name:YBX

Model Number:YB11A4-6A-Q

Place of Origin:China

6A Low Leakage Current IEC Socket Type EMI Filters Low Pass Power Filters 1.Product Parameters: Item Name Low Pass IEC Insert EMI Filters Model YB11A4-6A-Q Transfer Function Low Pass Package Type Socket Type Nominal Center Frequency 150KHz-30MHz Insertion ...