YJJ LIM-252 Infrared Sensor Standard Detector Voltage Mode Junction FET For Pyroelectric Detectors
|
Product Description: LIM-252 Infrared Sensor Standard Detector Voltage Mode Junction FET For Pyroelectric Detectors Features: single channel; TO39 housing; medium chip size; low Micro; JFET; voltage mode; ......
ShenzhenYijiajie Electronic Co., Ltd.
|
SPA04N80C3XKSA1 Power MOSFET 800V Ultra-High Voltage 4A Current Low Rds(on) Super Junction Technology Low Gate Charge High Efficiency Halogen-Free Robust Performance for SMPS and Industrial Drives
|
SPA04N80C3XKSA1 Power MOSFET 800V Ultra-High Voltage 4A Current Low Rds(on) Super Junction Technology Low Gate Charge High Efficiency Halogen-Free Robust Performance for SMPS andamp; Industrial Drives andnbsp; ......
TOP Electronic Industry Co., Ltd.
|
Portable Practical Super Capacity Battery , 4.2V Super Capacitor For Electric Vehicle
|
High Energy Super Capacitor Battery 4.2V 21000F 220*128*7.5mm 1.High energy density: 70-220wh/kg energy density 2.Great lifespan: Over 20,000 times charge/discharge cycle. 3.Low long-term cost:This is something you should only buy for use of 10 years4.......
Hefei Purple Horn E-Commerce Co., Ltd.
|
Stylish Practical Super Absorbent Muslin Baby Bibs Snap Closure Customized Printing Design
|
Stylish Practical and Super Absorbent Muslin Baby Bibs Snap Closure Our Service 1.Professional advice to help you find what you want. 2.Professional export service let you find that cooperation with us is more than business. 3.Credible and honest partners ......
Hongpeng New Material Technology Co., Ltd.
|
DMS3R3224R Electronic Components The super capacitor FET 0.22F 3.3V N-Channel New Original DMS3R3224R
|
#detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:2px;padding-top:8px;padding-bottom:4px}#detail_decorate_root .magic-1{width:750px;......
Shenzhen Kaigeng Technology Co., Ltd.
|
Silicon Carbide FET onsemi UJ4C075018K3S 750 Volt 18 Milliamp TO247 Package Ultra Low Gate Charge
|
|
...FET designed with a unique cascode circuit configuration. This configuration pairs a normally-on SiC JFET with a Si MOSFET to create a normally-off SiC FET device. Its standard gate-drive characteristics enable it to be a direct replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si super-junction......
Hefei Purple Horn E-Commerce Co., Ltd.
|
SLH60R080SS MOSFET 600V47A N-Channne TO-247 FET New Original 68mΩ 290W
|
General Description This Power MOSFET is produced using Maple semi‘s Advanced Super-Junction technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy ......
KZ TECHNOLOGY (HONGKONG) LIMITED
|
N-Channel MOSFET IMYH200R012M1H 2000V Silicon Carbide Junction Transistor TO-247-4
|
|
..., Through Hole, package is TO-247-4. Specification Of IMYH200R012M1H Part Number IMYH200R012M1H FET Type N-Channel Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 2000 V Current - Continuous Drain (Id) @ 25°C 123A (Tc)...
ShenZhen Mingjiada Electronics Co.,Ltd.
|
Soft Silicone Lip Permanent Makeup Practice Skin Microblading Tattoo Skin
|
|
.../Tattoo Practice/Tattoo Begainner Etc. Size 5.1*7.7CM/2*3.03Inch Advantage Easy to color and operate Color Option Brown/Skin Tone/Beige Place of Origin GUA China Feature of 3d permanent makeup practice skin: 1.Help beginners quickly raise the level of...
Guangzhou Qingmei Cosmetics Co., Ltd
|
IRFB4310PBF 100V 130A FET HEXFET Power Mosfet IRFB7440PBF 40V 120A
|
...FETs MOSFETs Transistors N-Channel 180A 200W Through Hole TO-220AB HEXFET FETs MOSFETs ---IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A Description: This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction...
Angel Technology Electronics Co
|
