HMC789ST89ETR RF Power Transistors General Purpose Frequency 700MHz
|
...RF Power Transistors Product Description: The HMC789ST89ETR RF Power Transistors are high-performance, high-frequency, high-power transistors suitable for use in amplifier applications. The HMC789ST89ETR offers excellent gain and power performance, as well as low noise, which makes it ideal for use in both linear and power amplifier applications. Features: - High-performance, high-frequency, high-power transistor......
Shenzhen Sai Collie Technology Co., Ltd.
|
J201 JFET N-Channel Transistor General Purpose high power rf transistors
|
...Transistor General Purpose high power rf transistors Manufacturer: Fairchild Product Category: JFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-92 Transistor Polarity: N-Channel Configuration: Single Vgs - Gate-Source Breakdown Voltage: - 40 V Gate-Source Cutoff Voltage: - 1.5 V Drain-Source Current at Vgs=0: 80 mA Pd - Power......
Wisdtech Technology Co.,Limited
|
FSX017LG General Purpose GaAs FET FUJITSU RF Power Transistors RF MODULE
|
FSX017LG is a General Purpose GaAs FET. Part NO: FSX017LG Brand: FUJITSU Date Code: 04+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely ......
Mega Source Elec.Limited
|
QX5252F high current power mosfet general purpose mosfet power mosfet ic
|
QX5252F high current power mosfet general purpose mosfet power mosfet ic...
Anterwell Technology Ltd.
|
EMD3T2R Power Mosfet Module Transistor General purpose ( Dual Digital Transistors )
|
General purpose (dual digital transistors) EMD3 / UMD3N / IMD3A Features 1) Both the DTA114E chip and DTC114E chip in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Structure Epitaxial planar type NPN / PNP silicon transistor......
ChongMing Group (HK) Int'l Co., Ltd
|
RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
|
... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND ...
Shenzhen Koben Electronics Co., Ltd.
|
Electronic Integrated Circuits MAX5860FUXH+ General Purpose RF IC Modulator
|
... of forward-error-correction (FEC) encoded data with full agility and drives a single RF-port using a 14-bit 4.6Gsps DAC. Specification Of MAX5860FUXH+ Part Number MAX5860FUXH+ Frequency 47MHz ~ 1.006GHz RF Type General Purpose Secondary Attributes Up...
ShenZhen Mingjiada Electronics Co.,Ltd.
|
50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor
|
...RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor......
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
|
Wide Band 700-3600MHz 20W RF Power Transistor LDMOS FETs 28V Broad-Band LDMOS RF Transistor, High Power RF Transistors
|
...
VBE Technology Shenzhen Co., Ltd.
|
Load Switch Rf Power Transistor / PWM High Power Mosfet Transistors
|
AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. Parameters Part Number ......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
|
Submit your “general purpose rf power transistors” inquiry in a minute :