Automotive IGBT Modules A2U12M12W2-F2 3 Level Topology 1200V SiC Power MOSFET Power Module
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... topology that integrates the advanced silicon carbide Power MOSFET technology. This A2U12M12W2-F2 module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on...
ShenZhen Mingjiada Electronics Co.,Ltd.
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NTH4L020N090SC1 SIC Power MOSFET 900V TO247-4L 20MOHM
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Shenzhen Zhongkaixin Micro Electronics Co., Ltd.
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1200V 75A PIM Mosfet Power Module IC 7MBR75UB120-50 IGBT Module Driver
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1200V 75A PIM Mosfet Power Module IC 7MBR75UB120-50 IGBT Module Driver 7MBR75UB120-50 IGBT MODULE (U series) 1200V / 75A / PIM Features . Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power......
Anterwell Technology Ltd.
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CLA50E1200HB High Power Mosfet Transistors / Thyristor For Line Frequency 1200V 50A
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...line frequency 1200V 50A Features / Advantages: ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability Applications: ● Softstart AC motor control ● DC Motor control ● Power converter ● AC power control ● Lighting and ......
Shenzhen Koben Electronics Co., Ltd.
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FGA25N120ANTDTU Power Mosfet Transistor New & Original 1200V NPT Trench IGBT
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FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C • Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = ......
ChongMing Group (HK) Int'l Co., Ltd
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F4N65L TO-220F-3L POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors
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...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power...
Shenzhen Hunt Electronics Co., Ltd
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FDI045N10A N Channel Power MOSFET 100V164A 4.5mΩ High Power
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High Power MOSFET FDI045N10A N-Channel PowerTrench® MOSFET 100V, 164A, 4.5mΩ High Power MOSFET FDI045N10A N-Channel PowerTrench® MOSFET 100V, 164A, 4.5mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors ......
Sunbeam Electronics (Hong Kong) Limited
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Mitsubishi Igbt Modules CM200DY-12H 200A 1200V High Power Switching Use Insulated Type
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Mitsubishi Igbt Modules CM200DY-12H 200A 1200V High Power Switching Use Insulated Type Description: Mitsubishi IGBT Modules are designed for use in switching applications.Each module consists of two IGBTs in a ......
Shenzhen Retechip Electronics Co., Ltd
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1200V 50A power transistor HXY MOSFET IXYR50N120C3D1-HXY designed for UPS EV charger and solar inverter
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Product Overview The IXYR50N120C3D1 is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-reliability applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge......
Hefei Purple Horn E-Commerce Co., Ltd.
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IRF7476TRPBF MOSFET Power Electronics HEXFET Power MOSFET
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...-source voltage of 55V, and maximum gate threshold voltage of 2.5V. 3. It has a low on-resistance of 0.022 ohms and a high power dissipation of 12W. 4. This MOSFET is ideal for applications such as DC/DC converters, audio amplifiers and motor drives. 5...
Shenzhen Sai Collie Technology Co., Ltd.
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