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Total 6044 products from pwm low power mosfets Manufactures & Suppliers |
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Brand Name:Lingxun Place of Origin:China ...Low Power Mosfets Electronic Devices Improved System Efficiency Product Description: Our Low Voltage MOSFET boasts of a low on-resistance, which is essential in minimizing power losses and improving system efficiency. With this feature, this product can handle high currents with minimal power dissipation, making it ideal for power management, motor control, and other high-power applications. Another advantage of our Low Voltage MOSFET |
Guangdong Lingxun Microelectronics Co., Ltd
Guangdong |
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Place of Origin:China, CN Brand Name:/ Model Number:VNH7100BASTR Motor Driver VNH7100BASTR 4V-28V 16SO with PWM and Power MOSFET #detail_decorate_root .magic-0{border-bottom-style:dashed;border-bottom-color:#fff;font-family:Roboto;font-size:24px;color:#fff;background-color:#000;font-style:normal;border-bottom-width:2px;... |
Muz Tech Co.,Ltd
Hunan |
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Brand Name:AOSMD Model Number:AO4449 Place of Origin:brand new ... trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4449 is Pb-free (meets ROHS & Sony 259 specifications). TYPICAL ELECTRICAL AND |
Anterwell Technology Ltd.
Guangdong |
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Brand Name:Hua Xuan Yang Model Number:AOD442 Place of Origin:ShenZhen China AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. Parameters Part Number ... |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
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Brand Name:REASUNOS Place of Origin:Guangdong, CN Low Power Loss SGT Process Application Low Rds(ON) Energy Storage Field Effect Transistor *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } ... |
Reasunos Semiconductor Technology Co., Ltd.
Guangdong |
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Brand Name:Standar Model Number:AS1360-33-T Place of Origin:Malaysia 1.5uA Low Power Mosfet Transistor AS1360-33-T Positive Voltage Regulator AS1360 1.5µA Low-Power, Positive Voltage Regulator 1 General Description The AS1360 low-power, positive voltage regulator was designed to deliver up to 250mA while consuming onl... |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:Infineon Model Number:IR2104PBF Place of Origin:Mulit-origin ...: The IR2104PBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. This driver is designed to drive power MOSFETs and IGBTs in the high side configuration which operates up to 600V... |
Shenzhen Sai Collie Technology Co., Ltd.
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Model Number:MAX483ESA Place of Origin:china Specifications 1 competitive price 2 warranty of each part 3 fast delicery 4 new and original |
Hans Innovation Group
Guangdong |
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Place of Origin:China Brand Name:ONSEMI Model Number:FDS6898A High Power MOSFET FDS6898A Dual N-Channel PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for ... |
Sunbeam Electronics (Hong Kong) Limited
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Brand Name:HT Model Number:F4N65L TO-220F-3L Place of Origin:China ...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power |
Shenzhen Hunt Electronics Co., Ltd
Guangdong |
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Brand Name:IXYS Model Number:IXFK27N80Q Place of Origin:Original Factory ...Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages z Low... |
Shenzhen Retechip Electronics Co., Ltd
Guangdong |
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Brand Name:Huixin Model Number:BC2301 Place of Origin:China SOT-23 Plastic-Encapsulate MOSFETS BC2301 P-Channel 20-V(D-S) MOSFET BC2301 SOT-23 Datasheet.pdf FEATURES TrenchFET Power MOSFET MARKING: 2301 APPLICATIONS Load Switch for Portable Devices DC/DC Converter Maximum ratings (Ta=25℃ unless otherwise noted) ... |
Guangdong Huixin Electronics Technology Co., Ltd.
Guangdong |
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Place of Origin:PHILIPPINE Brand Name:Micrel Semiconductor Model Number:MIC5016BWM ...designed for gate control of N-channel, enhancement-mode, power MOSFETs used as high-side or low-side switches. The MIC5016/7 can sustain an on-state output indefinitely. The MIC5016/7 operates from a 2.75V to 30V supply. In highside configurations, the |
Mega Source Elec.Limited
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Brand Name:original Model Number:PBSS4160T,215 Place of Origin:Original Manufacturer ...LOW VCESAT MOSFET POWER TRANSISTOR PNP COMPLEMENT PBSS4160T Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: NPN Mounting Type: Surface Mount Package: SOT23 High Light: n channel mosfet transistor , n channel transistor PBSS4160T NPN low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low... |
Shenzhen Huahao Gaosheng Technology Co., Ltd
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Brand Name:UCHI Model Number:HT7550 7530 Place of Origin:Dongguan China ...Low Power LDO Features ● Low power consumption ● Low voltage drop ● Low temperature coefficient ● High input voltage (up to 24V) ● Related product model: HT7536-1,HT7550-1,HT7536-1,HT7533-1,HT7530-1... ● High output current : 100mA (Pd 250mW) ● Output voltage accuracy: tolerance 3% ● TO-92, SOT-89 and SOT-25 package Applications ● Battery powered... |
Guangdong Uchi Electronics Co.,Ltd
Guangdong |
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Brand Name:ON Semiconductor Model Number:MMDF3N04HDR2 Place of Origin:Shenzhen, China ... high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. These devices are designed for use in low voltage, high speed switching applications where power efficiency is important. |
Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong |
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Brand Name:IOR Model Number:IRFZ44NPBF Place of Origin:CHINA ...POWER MOSFET 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs... |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
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Brand Name:JUYI Model Number:JY09M TO 252 Place of Origin:China ... the high cell density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. FEATURES ● |
Shanghai Juyi Electronic Technology Development Co., Ltd
Shanghai |
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Place of Origin:China Brand Name:USR Model Number:USR-WIFI232-G2a ...low power: standby power consumption 10ma@3.3v only 2.WPS function, have been tested with more than 50 types of routers 3.Support AP/STA/AP+STA mode and 5 channnel TCP link 4.GPIO/PWM function 5.Multi-TCP Link Connection Character: 1.Single stream WiFi @2.4GHz support for WEP security mode as well as WPA/WPA2 2.Fully self-contained serial-to-wireless functionality. 3.Ultra-low |
Jinan USR IOT Technology Limited
Shandong |
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Brand Name:IR Original Model Number:IR21094STRPBF Place of Origin:Original & New IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS... |
Shenzhen ATFU Electronics Technology ltd
Guangdong |