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Size customized 0.32mm thickness Silicon Nitride Substrates For IGBT And SiC MOSFET

Categories Silicon Nitride Products
Brand Name: Cersol
Place of Origin: China
Payment Terms: T/T IN ADVANCE
Delivery Time: USUALLY 1 MONTH
Packaging Details: BAGS, BARRELS, CARTONS
Material: siliocn nitride
Color: black
Application: IGBT
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Size customized 0.32mm thickness Silicon Nitride Substrates For IGBT And SiC MOSFET

Description


Silicon nitride ceramics have many excellent performances such as high hardness, high strength, small thermal expansion coefficient, small high temperature creep, good antioxidant performance, good thermal corrosion performance, and small friction coefficients. It is the best ceramic material in comprehensive performance. It is widely used in the fields of aerospace, high -speed rail, and new energy vehicles. It is an important core heat dissipation material for insulation grid bipolar crystal pipes (IGBT) and silicon carbide power module (SIC MOSFET).


Features

  • High hardness,high strength
  • Good antioxidant performance
  • Good thermal corrosion performance
  • Small thermal expansion coefficient
  • Small high temperature creep
  • Small friction coefficients

Dimension

DimensionThicknessLength and Width
0.32mm114.3*114.3mm
138*190mm
Remarks: Customized according to customer requirements


Materials Properties

Materials PropertiesFormulaSi3N4
ColorGrey/ White
Density(g/cm3)≥3.20
Surface roughness Ra
(μm)
0.200-0.600
Flexural Strength
(MPa)
800
Camber
(Length‰)
≤3
Thermal Conductivity
(25
,W/m·k)
80
Coefficient of thermal expansion
(10
-6/K{40-400})
2.0-3.0
Coefficient of thermal expansion
(10
-6/K{40-800})
2.0-3.0
Dielectric Constant≥17
Volume resistance≥1014








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