npn silicon rf power transistor 2

Place of Origin:MALAYSIA

Brand Name:MOTOROLA

Model Number:MRW53601

MRW53601 is a NPN SILICON RF POWER TRANSISTOR. Part NO: MRW53601 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are ...

Model Number:SD1480

Place of Origin:Malaysia

Brand Name:KAIGENG

SD1480 N/A Electronic Components IC MCU Microcontroller Integrated Circuits SD1480 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Brand Name:Anterwell

Model Number:2SC1972

Place of Origin:original factory

NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972 DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • Replaces Original 2SC1972 in ...

Brand Name:SAIKELI

Model Number:MJE3055T

Place of Origin:China

MJE3055T TO-220 Complementary Silicon Plastic Power Transistors Description 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS There are two limitations on the power handling ability of a transistor: average junction temperature and ...

Brand Name:NXP

Model Number:BFS505

Place of Origin:CHINA

...NPN PNP Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Brand Name:RENESAS

Model Number:2SC5508-T2B

Place of Origin:Original

... power gain: MAG = 19 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz • fT = 25 GHz technology adopted • ...

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　

Brand Name:UCHI

Model Number:3904W /3906W

Place of Origin:Dongguan China

...NPN and PNP Silicon FEATURES -These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. - Pb-Free Package is available. GENERAL PURPOSE AMPLIFIER TRANSISTORS...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:MJE13003

TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications MARKING MJE13003=Device code Solid dot = Green molding compound device, if none, the normal device ORDERING INFORMATION Part Number Package Packing ...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:MJE13003

TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR (NPN) FEATURE Ÿ Power Switching Applications MARKING MJE13003=Device code Solid dot = Green molding compound device, if none, the normal device ORDERING INFORMATION Part Number Package Packing ...

Categories:Electronic Semiconductors

Country/Region:china

Part number : BFP420H6327XTSA1 Product Overview: The BFP420H6327XTSA1 is a high-performance NPN RF transistor manufactured by Infineon Technologies. This component is designed for applications requiring low noise figure, high gain, and high-speed ...

Brand Name:Semelab / TT Electronics

Model Number:D2085UK

Place of Origin:UK

...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power

Model Number:2N3866

Place of Origin:Guangdong, China

Brand Name:ALL BRAND

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Brand Name:Infineon Technologies

Model Number:IRF3205PBF

Place of Origin:Original

...Silicon Npn Power Transistors 55V 110A 8.0mΩ Power MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power...

Brand Name:VISHAY

Model Number:3DU5C

Place of Origin:Original Factory

880nM 2 PINS 3DU5C NPN Silicon Phototransistor with Metal Encapsulated Features :  NPN Silicon Phototransistor;  Model : 3DU5C  Working Voltage(Max.) : 10V;  Reverse Breakdown Voltage : 15V;  Dark Current : 0.3uA  Photocurrent : 0.5-1mA;  Power ...

Place of Origin:US

Brand Name:Original

Model Number:2sa1494 2sc3858

Product Detail Packaging Bulk Part Status Obsolete Transistor Type NPN/PNP Current - Collector (Ic) (Max) 17A Voltage - Collector Emitter Breakdown (Max) 200V Vce Saturation (Max) @ Ib, Ic 2.5V @ 1A, 10A Current - Collector Cutoff (Max) 100µA (ICBO) DC ...

Brand Name:TOSHIBA

Model Number:2SC3907 2SA1516

Place of Origin:JAPAN

Model Number:BCX56-16

Place of Origin:Guangdong, China

Brand Name:Original

... or amplification needs? Look no further than the BCX56-16 NPN silicon AF transistors. These transistors are complementary to the BCX53-16 PNP transistor and are used in AF driver and output stages, making them perfect for a variety of applications. Not

Model Number:2SC4468

Place of Origin:Guangdong, China

Brand Name:original

...transistor TO-3-3 Products Description:​ 1. TO-3P NPN 140V 10A 2. 2SC4468 bipolar transistor 3. Bipolar(BJT)Transistor NPN 140v 10a 20 MHz 100W Through Hole to-3p 4. Trans GP BJT NPN 140V 10A 3-pin(3+Tab) Technological Parameters: frequency 20 MHz Dissipation power 100 W polarity NPN installation Through Hole Pin number 3 encapsulation TO-3-3 material Silicon...

Brand Name:Original

Model Number:MMBT5551

...NPN General-Purpose Amplifier MMBT5550LT1 High Voltage Transistor NPN Silicon SOT-23 - Power Transistor and Darlingtons Part number BC807-T CMBTA56-T CMBT4403-T CMBTA06 CMBT3906-T CMBT3906 CMBTA56 CMBTA42-T CMBT4401-T CMBTA42 CMBT3904 CMBT4403 CMBTA92 CMBT5551 CMBT5401 CMBT5551-T CMBT3904-T CMBTA92-T CMBTA06-T CMBT5401-T CMBT4401 CMBT9014 MMBT5551 Electrical Characteristics Mfr. # MMBT5551 Mounting Style SMD/SMT Transistor