high power rf amplifier

Brand Name:SWT

Model Number:SW-PA-8002000-60C

Place of Origin:China

High performance 0.8 - 2 GHz L Band Power Amplifier Psat 57 dBm High Power RF Amplifier For Test and Measurement Description The 0.8-2 GHz Psat 57 dBm RF Power Amplifier Box is a high-performance amplifier designed for a wide range of RF applications, including communications, radar, and electronic warfare. This amplifier provides exceptional power...

Brand Name:Kimpok Technology / OEM

Model Number:KP-LAM800-50W

Place of Origin:China

500Mhz - 2400MHz High Power RF Power Amplifier Smaller Size LAN 28V DC ​Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA...

Brand Name:Ding Shen

Model Number:DS-LAM800-50W

Place of Origin:China

500Mhz - 2400MHz High Power RF Power Amplifier Smaller Size LAN 28V DC ​Features: The integrated Noise source and RF PA in one house, smaller size and only connect DC28,6A to it Prevent the interference of high radiated RF power to monitoring-unit and PA...

Brand Name:Bicheng Technologies Limited

Model Number:BIC-128-V2.0

Place of Origin:China

...High Frequency PCB on Double Sided Copper With Green Mask for High Power RF Amplifiers (Printed Circuit Boards are custom-made products, the picture and parameters shown are just for reference) RT/duroid 6035HTC high frequency circuit materials of Rogers Corporation are ceramic filled PTFE composites for use in high power RF...

Brand Name:XCE

Model Number:XCE BB50

Place of Origin:China

Double Sided High Frequency Pcb With RF Microwave For High Power RF Amplifier Quick Detail : Type Pcb Material Rogers Layer 2 Size 6*6cm Permittivity 2.2 Color Green Surface Finish Immersion Tin Parameter: Model Parameter thickness(mm) Permittivity(ER) F4B...

Brand Name:NENGXUN

Model Number:NX-PA5.8GHz

... power output and anti-interference performance, it meets the demanding requirements in industrial, communication and military fields. Core Performance Highlights Precise ...

Brand Name:VBE

Model Number:VBPA14000M

Place of Origin:China

...RF Power Amplifier PA , RF Power Amplifier Module VBE RF Power Amplifier Module Introdutions: VBE solutions of RF modules including radio frequency signal source,radio frequency power amplifier(PA),low noise amplifier(LNA), Radio Frequency outdoor unit(ODU) and customized radio frequency module solution,the frequency band cover P-wave band,L-wave band,S-wave band,Ku-wave band and Ka-wave band and so on,broadly applying in high...

Place of Origin:Guangdong, China

Brand Name:LDSK

...power amplifier module stipulate the definition of each port of the module and the shape and structure of the module. Place of Origin Guangdong, China Brand Name LDSK Place of Origin Guangdong, China Product Name RF power amplifier module(GaN) Frequency 5

Place of Origin:MALAYSIA

Brand Name:MOTOROLA

Model Number:PTFA18100

... Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / PHS repeaters, trunk amplifiers, tower mounted amplifiers,

Place of Origin:CHINA

Brand Name:EST

Model Number:100W-300MHz

...High Power RF Jamming Module Working Frequency 20MHz~2700MHz Product Description: Our 100W Blocking Power Amplifier Module is a high-performance LTE NR PA Module for communication use. It comes with a working voltage of DC 28V and a working frequency of 20MHz~2700MHz, enabling a maximum working current of ≤10A. This 100W Blocking Power Amplifier Module also provides an output power of 50dBm, and its module size is 200×90×24mm. It is highly

Brand Name:ATNJ

Model Number:AT-20-700-20W

Place of Origin:China

...power amplifier (UWPA) is a power amplifier with ultra wide bandwidth designed to amplify signals across a wide range of frequencies while maintaining high efficiency, linearity, and low distortion. It was specifically designed for RF jamming, but has also

Brand Name:MXT

Model Number:TDD4200T4400M 10W-28V

Place of Origin:China

... applications. It is small in size (170*110*20mm) and is housed in a durable aluminum case. With its low input/output VSWR of less than 1.8, it offers high linearity and low noise figure of less than 3dB. It supports a wide range of input power of

Brand Name:DALEE

Model Number:DL50011204

Place of Origin:Guangdong,China(Mainland)

...tested and quality controlled prior to shipment Product Details: Product name: DALEE RF Connector Secification: Three generation Type : Female Certification: ISO9001,UL,ROHS and the latest REACH Voltage Rating: 60 VAC ...

Brand Name:HLA

Model Number:SA-1250

Place of Origin:China

Powered Audio Amplifier , Living Event Switch Mode High Power Audio Amplifier With Class TD Quick Detail: Place of Origin : Guangzhou , China Brand name : HLA Model Number: SA-1250 Service Type: OEM or ODM Description: Nowadays, in professional sound industry, more and more people are seeking for amplifiers with light weight, high power output, and high efficiency. Switch mode power amplifiers...

Brand Name:LENOLINK

Model Number:100W RF LOAD with 4.3-10 connector

Place of Origin:CHINA

...high power RF Load waterproof IP67 with PIM 150dBc 4.3-10 female connector used in 2G,3G,4G 1. 200w high power RF load , the PIM is 150-160dBc .With very good performance . 2. The VSWR is <1.2 3. Intermodulation is 150-160dBc@2X43dBm 4. IP 67 , outsider , good waterproof. 5. Frequency :0-3000G New features 1. Integrates 2 ~8 Wireless Bands 2. More than 50~100 dB Input Isolation 3. High Average Power...

Brand Name:Analog Devices Inc.

Model Number:AD9361BBCZ

Place of Origin:Multi-origin

...RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide gate voltage range and excellent thermal stability. It is ideal for applications such as RF power amplifiers, cellular base stations and other wireless communication applications. Features: • High power capability: Pout = 10 W • High

Model Number:YPM5840B

Place of Origin:Jiangsu, China

Brand Name:SZHUASHI

... to 5725-5850MHz signal. This module has the advantages of high average output power, and good in band flatness. Features Frequency Range 5725-5850MHz Operation Voltage 28V Output power 46dBm Power flatness <1dB Packing & Delivery To better ensure the

Brand Name:TX TELSIG

Model Number:YP233433

Place of Origin:China

... InGaP/GaAs HBT process. This amplifier provides a typical gain of 35dB and P1dB power of 33dBm, typical bias condition is 5V at 320mA. The input are internally matched to 50Ω and require a minimum of external matching components to ...

Brand Name:BOCHEN

Model Number:RIG22

Place of Origin:Chengdu

Rf Resistor 50 ohm 100w Ceramic High Power Rf Flange 50 ohm Resistor Description The RIG22 is a high-performance power resistor engineered for applications requiring precision, durability, and superior heat resistance. Manufactured by BOCHEN, the RIG22 features a robust ceramic core structure with flame-retardant coating, ensuring excellent thermal conductivity and mechanical stability under continuous load. With a power...

Brand Name:Diodes Incorporated

Model Number:BS816A-1

Place of Origin:USA

...RF Transistors Manufacturer: DIODES Product Category: P-CHANNEL ENHANCEMENT RoHS: Details Mounting Style: - Package / Case: 16NSOP Packaging: Standard Unit Weight: - oz This transistor is suitable for RF power amplifiers in various applications such as wireless communication, broadcasting, and industrial RF equipment. ● P-channel enhancement mode ● DMOS transistor technology ● High power