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All electronics power mosfet transistor wholesalers & electronics power mosfet transistor manufacturers come from members. We doesn't provide electronics power mosfet transistor products or service, please contact them directly and verify their companies info carefully.
Total 3412 products from electronics power mosfet transistor Manufactures & Suppliers |
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Brand Name:Original Model Number:TIC106M Get to Know Tic106m: The Solid State Relay You've Been Looking For Pros and Cons of the Tic106m Solid State Relay for Electronics Applications If you're looking for a reliable and high-performance solid state relay for your electronics projects, the ... |
Yougou Electronics (Shenzhen) Co., Ltd.
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Brand Name:Standar Model Number:BCX6925TA Place of Origin:China ...Power Mosfet Transistors / Electronics Component Transistor FEATURES * High gain and low saturation voltages COMPLEMENTARY TYPE – BCX68 PARTMARKING DETAIL – BCX69 – CJ BCX69-16 – CG BCX69-25 – CH ABSOLUTE MAXIMUM RATINGS. Collector to base voltage VCBO -25 V Collector to emitter voltage VCEO -20 V Emitter to base voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Power... |
Anterwell Technology Ltd.
Guangdong |
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Brand Name:AOS Model Number:AO4441 Place of Origin:original AO4441 MOSFET Power Electronics FETs MOSFETs Transistors P-Channel 60V 4A Surface Mount Package 8-SOIC FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 4A (Ta) Drive ... |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:original Model Number:M68702H Place of Origin:Original Manufacturer ...POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor for FM MOBILE RADIO List Of Other Electronic... |
Shenzhen Huahao Gaosheng Technology Co., Ltd
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Brand Name:ONSEMI Model Number:MMBTA43LT1G Place of Origin:Original MMBTA43LT1G high voltage power mosfet transistors , rf power mosfet transistors High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number Package Type Shipping† MMBTA42LT1G SOT−23 (Pb−Free) 3,... |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:Lingxun Place of Origin:China Model Number:CS28N20AT ... Resistance: Low Rds(ON) Material: Silicon Power Consumption: Low Power Loss Thermal Robustness Motor Driving Advanced Trench Technology Technical Parameters: Efficiency High Efficiency And Reliable Power Consumption Low Power Loss Resistance Low Rds(ON) |
Guangdong Lingxun Microelectronics Co., Ltd
Guangdong |
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Brand Name:Mitsubishi Model Number:M68702H Place of Origin:JP M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor for FM MOBILE RADIO List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/BRAND SS513AT HONEYWELL RT2528L RALNK RT5501WSC RICHTEK IRG4RC20FTR ... |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
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Brand Name:STMicroelectronics Model Number:STB24N60DM2 ...Power Mosfet Transistors Field Effect Transistor Discrete N-Channel N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2 Power MOSFETs in D²PAK, TO-220 and TO-247 packages App Characteristics Features Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Description These high voltage N-channel Power |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Brand Name:INFINEON Model Number:IRF540NSTRLPBF Place of Origin:Germany ...Power MOSFET Transistor 100V 44mΩ 33A New Orignal high quality Parameters in details: Advanced HEXFET Power MOSFETs from Packaging: the TO - 263 Type: N channel Continuous drain current (ID) at 25°C: 33A Drain-source voltage (VDSS) : 100V Gate source threshold voltage: 4V @ 250uA Leakage source on resistance: 44 MQ2@16A,10V Maximum power... |
DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong |
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Brand Name:Original Factory Model Number:SCT4018KEC11 Place of Origin:CN ... MOSFET Transistors, package is TO-263-8. Specification Of SCT4018KEC11 Part Number: SCT4018KEC11 Fall Time: 14 ns Forward Transconductance - Min: 22 S Product Type: MOSFET Rise Time: 43 ns Subcategory: MOSFETs Transistor Type: 1 N-Channel Typical Turn-Off |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:original Model Number:LBSS138LT1G Brand new Original MOSFET Transistors SOT-23 LBSS138LT1G Products Description: 1. Typical applications are dc–dc converters, power management inportable and battery–powered products such as computers, printers,PCMCIA cards, cellular and cordless telephones... |
Shenzhen Res Electronics Limited
Guangdong |
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Brand Name:ST Model Number:STPS15L30C-TR STS1DNC45 STV6419AG Place of Origin:Original Electronic components STPS15L30C-TR STS1DNC45 STV6419AG mosfet advantage price for original stock Feature • Enhancement mode transistor – Normally OFF switch • Ultra fast switching • No reverse-recovery charge • Capable of reverse conduction • ... |
Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong |
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Model Number:NP110N055PUG Place of Origin:US Brand Name:Original MOSFET N-CH 55V 110A TO-263 NP110N055PUG Product Description Packaging Tape & Reel (TR) Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 110A (Tc) Drive ... |
Shenzhen Quanyuantong Electronics Co., Ltd.
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Brand Name:Hua Xuan Yang Model Number:AOD442 Place of Origin:ShenZhen China AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. Parameters Part Number ... |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
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Model Number:MBRF20150CT Place of Origin:United States Brand Name:Original #detail_decorate_root .magic-0{width:750px}#detail_decorate_root .magic-1{overflow:hidden;width:750px;height:405.95399188092017px;margin-top:0;margin-bottom:0;margin-left:0;margin-right:0}#detail_decorate_root .magic-2{margin-top:-3px;margin-left:0;width:... |
ShenZhen QingFengYuan Technology Co.,Ltd.
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Brand Name:REASUNOS Place of Origin:Guangdong, CN Low Voltage MOSFET Trench Process Wireless Charging High EAS Capability *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas... |
Reasunos Semiconductor Technology Co., Ltd.
Guangdong |
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Model Number:VRF2933 Place of Origin:Malaysia Brand Name:KAIGENG VRF2933 N/A Electronic Components IC MCU Microcontroller Integrated Circuits VRF2933w #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width... |
Shenzhen Kaigeng Technology Co., Ltd.
Guangdong |
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Place of Origin:China Brand Name:ONSEMI Model Number:BSS123 ...Power MOSFET BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronic |
Sunbeam Electronics (Hong Kong) Limited
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Brand Name:Semelab Model Number:D1028UK Place of Origin:UK ...: 30 A Vds - Drain-Source Breakdown Voltage: 70 V Operating Frequency: 175 MHz Gain: 13 dB Output Power: 300 W Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: DR Brand: Semelab / TT Electronics Configuration: |
Wisdtech Technology Co.,Limited
Guangdong |
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Brand Name:Infineon Model Number:IRF640NPBF Place of Origin:Original Factory ...MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs... |
Shenzhen ATFU Electronics Technology ltd
Guangdong |