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All ad8361armz reel7 rf power amplifier transistor wholesalers & ad8361armz reel7 rf power amplifier transistor manufacturers come from members. We doesn't provide ad8361armz reel7 rf power amplifier transistor products or service, please contact them directly and verify their companies info carefully.
Total 21 products from ad8361armz reel7 rf power amplifier transistor Manufactures & Suppliers |
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Brand Name:Analog Devices Inc. Model Number:AD8361ARMZ-REEL7 Place of Origin:Multi-origin ...: Reel Number of Transistors: 7 Configuration: Single-Ended Power Output: +28dBm Gain: 16dB Operating Frequency: 0.05-6GHz Input/Output Impedance: 50Ω Operating Voltage: 5V ... |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:VBE Model Number:VBE10R5 Place of Origin:CHINA Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz |
VBE Technology Shenzhen Co., Ltd.
Guangdong |
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Place of Origin:Freescale Semiconductor Brand Name:Motorola Model Number:MHW903 Quick Detail: MHW903 - Motorola, Inc - 3.5 W 890 to 915 MHz RF POWER AMPLIFIERS Description: . . . designed specifically for the Pan European digital 2.0 watt, GSM hand–held radio. The MHW903, MHW953 and MHW954 are capable of wide power range control, ... |
Mega Source Elec.Limited
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Brand Name:Anterwell Model Number:2SC1972 Place of Origin:original factory NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972 DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • Replaces Original 2SC1972 in ... |
Anterwell Technology Ltd.
Guangdong |
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Brand Name:TeXin Model Number:TX-50W Place of Origin:Shenzhen China .... With support for multiple frequency bands over 1000MHz bandwidth. Equipped with high power transistors circuits, this amplifier is capable of delivering a maximum output power of 50W, ensuring strong and reliable signal amplification for your projects. |
Shenzhen TeXin electronic Co., Limited
Guangdong |
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Brand Name:Mitsubishi Electric Semiconductor Model Number:2SC1971 Place of Origin:CHINA 2SC1971 C1971 TO220 NPN epitaxial planar type transistor designed for RF power amplifiers Description: silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. List Of Other Electronic Components... |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
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Place of Origin:Netherlands Brand Name:ORIGINAL Model Number:MRF6VP11KH #detail_decorate_root .magic-0{border-bottom-style:none;border-bottom-color:113c6f;font-family:Verdana;font-size:24px;color:#fff;background-color:#113c6f;text-align:center;text-decoration:underline;font-style:normal;font-weight:bold;border-bottom-width:2px... |
ShenZhen QingFengYuan Technology Co.,Ltd.
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Model Number:2SC2782 Place of Origin:Malaysia Brand Name:KAIGENG 2SC2782 N/A Electronic Components IC MCU Microcontroller Integrated Circuits 2SC2782 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:... |
Shenzhen Kaigeng Technology Co., Ltd.
Guangdong |
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Place of Origin:Jiangsu, China Brand Name:SZHUASHI Model Number:YP40601625T SZHUASHI 100% New YP40601625T 30W 50V 5700- 5900MHz PA Power Amplifier RF Power Transistor with Standard Features Product Description The YP40601625T is a 30-watt, internally matched GaN HEMT, designed for multiple applications with frequencies ... |
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
Jiangsu |
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Brand Name:NXP Model Number:BFS505 Place of Origin:CHINA ...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF... |
DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong |
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Model Number:BFS505 Place of Origin:CHINA ...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF... |
ChongMing Group (HK) Int'l Co., Ltd
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Place of Origin:US Brand Name:Original Model Number:2sc2078 Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for you once every two days, until you get the products. 5. When you got the ... |
Shenzhen Quanyuantong Electronics Co., Ltd.
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Brand Name:LDSK Model Number:LDSKPA Place of Origin:Guangdong, China Product Parameters 2.4GHz 50W anti drone module for anti drone system Power and Frequnecy support Customzation form 90MHZ- 6700mhz, 10W,20W,30W, 40W, 50w,100W,150W,200W --GaN enables high efficiency and high output. The radio frequency and monitoring ... |
Shenzhen Ladasky Technology Co.,Ltd
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Brand Name:MITSUBISHI Model Number:RA20H8087M Place of Origin:JAPAN
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G-Resource Electronics Co.,Ltd
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Brand Name:Diodes Incorporated Model Number:BS816A-1 Place of Origin:USA ...TRANSISTOR RF Transistors Manufacturer: DIODES Product Category: P-CHANNEL ENHANCEMENT RoHS: Details Mounting Style: - Package / Case: 16NSOP Packaging: Standard Unit Weight: - oz This transistor is suitable for RF power amplifiers in various applications such as wireless communication, broadcasting, and industrial RF equipment. ● P-channel enhancement mode ● DMOS transistor technology ● High power |
Wisdtech Technology Co.,Limited
Guangdong |
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Categories:Amplifier Country/Region:china Good quality Electronic Component provider from China——GS Electronics, Product Details: AD8605ARTZ-REEL7 Introduction: Welcome to the detailed product page for the AD8605ARTZ-REEL7. This low-power, precision rail-to-rail input and output operational ... |
Shenzhen GS Electronic Technology Co., Ltd. CN
Guangdong |
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Brand Name:original Model Number:MRF9045LR1 Place of Origin:original ...RF Bipolar Transistors Si original in stock The ASI MRF9045LR1 is a high voltage, gold-metalized, laterally diffused metal oxide semiconductor. Ideal for today's RF power amplifier Applications. Product Category: RF MOSFET Transistors RoHS: Details Transistor... |
Walton Electronics Co., Ltd.
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Brand Name:Vishay / Siliconix Model Number:IRFP260 Power Up with IRFP260 MOSFET Transistors Unlock the Pros and Cons of IRFP260 for Your Electronics Projects If you're looking for high-powered MOSFET transistors to use in your electronics projects, you might want to consider the IRFP260 model. This powerful semiconductor device is designed to handle high voltages and currents, making it ideal for a wide range of applications, from power supplies and motor control to audio amplifiers and RF |
Yougou Electronics (Shenzhen) Co., Ltd.
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Brand Name:INFINEON Model Number:PXAC241702FC-V1-R250 Place of Origin:CHINA PXAC241702FC-V1-R250 RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor RFP-LD10M Description ThePXAC241702FC is a 28 V LDMOS FET with an asym metrical design intended for use in multi-standard cellular power amplifier ap-plications in the ... |
Shenzhen Hongxinwei Technology Co., Ltd
Guangdong |
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Brand Name:Fremont Micro Devices Ltd Model Number:FT93C46A-IDR-B ..., spectrum analyzers, etc. The transistor features low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. NPN complements are BFR93 and |
Sanhuang electronics (Hong Kong) Co., Limited
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