33a hexfe power mosfet transistor

Brand Name:INFINEON

Model Number:IRF540NSTRLPBF

Place of Origin:Germany

...HEXFE Power MOSFET Transistor 100V 44mΩ 33A New Orignal high quality Parameters in details: Advanced HEXFET Power MOSFETs from Packaging: the TO - 263 Type: N channel Continuous drain current (ID) at 25°C: 33A Drain-source voltage (VDSS) : 100V Gate source threshold voltage: 4V @ 250uA Leakage source on resistance: 44 MQ2@16A,10V Maximum power...

Brand Name:Original Factory

Model Number:AIMBG120R060M1

Place of Origin:CN

... in hybrid and electric vehicles. Built on a state-of-the-art SiC trench technology combined with .XT interconnection technology the silicon carbide mosfet is specifically designed to meet the

Brand Name:IRF

Model Number:IRF7329

Place of Origin:Thailand

... New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well

Brand Name:original

Model Number:M68702H

Place of Origin:Original Manufacturer

...POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor...

Brand Name:Lingxun

Place of Origin:China

Model Number:CS28N20AT

... Resistance: Low Rds(ON) Material: Silicon Power Consumption: Low Power Loss Thermal Robustness Motor Driving Advanced Trench Technology Technical Parameters: Efficiency High Efficiency And Reliable Power Consumption Low Power Loss Resistance Low Rds(ON)

Brand Name:onsemi

Model Number:FDD3672

Place of Origin:original

FDD3672 - High Power MOSFET Transistor for Advanced Power Electronics Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 6.5A (Ta), 44A (...

Brand Name:STMicroelectronics

Model Number:STB24N60DM2

...Power Mosfet Transistors Field Effect Transistor Discrete N-Channel N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2 Power MOSFETs in D²PAK, TO-220 and TO-247 packages App Characteristics Features Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Description These high voltage N-channel Power

Brand Name:STMICROELECTRONICS

Model Number:VND3NV0413TR

Place of Origin:China

... clamp ■ Low current drawn from input pin ■ Diagnostic feedback through input pin ■ ESD protection ■ Direct access to the gate of the Power MOSFET (analog driving) ■ Compatible with standard Power MOSFET in

Place of Origin:US

Brand Name:Original

Model Number:IRF3205PBF

Product Detail IRF3205 also have China made high quality, if interested,pls contact us to get quote. Our company can supply all IRF Series, hot sale and in stock, wholesale will get good quote. Packaging Tube Part Status Active FET Type N-Channel ...

Brand Name:Original brand

Model Number:NVHL040N65S3F

Place of Origin:Original

... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is

Brand Name:Mitsubishi

Model Number:M68702H

Place of Origin:JP

M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor for FM MOBILE RADIO List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　 PART NUMBER MFG/BRAND SS513AT HONEYWELL 　 RT2528L RALNK RT5501WSC RICHTEK 　 IRG4RC20FTR IR RF071M2STR ROHM...

Brand Name:Hua Xuan Yang

Model Number:AOD442

Place of Origin:ShenZhen China

AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. Parameters Part Number ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Low Voltage MOSFET Trench Process Wireless Charging High EAS Capability *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas...

Model Number:MBRF30100CT

Place of Origin:United States

Brand Name:Original

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Place of Origin:China

Brand Name:ONSEMI

Model Number:EFC2K102ANUZTDG

... in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has a

Model Number:VRF2933

Place of Origin:Malaysia

Brand Name:KAIGENG

VRF2933 N/A Electronic Components IC MCU Microcontroller Integrated Circuits VRF2933w #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width...

Brand Name:Infineon

Model Number:IRF640NPBF

Place of Origin:Original Factory

...MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...

Brand Name:onsemi

Model Number:FDA50N50

Place of Origin:Original Factory

...Mosfet 48A 500V DMOS AC−DC Power Supply Transistor Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power...

Brand Name:Semelab

Model Number:D1028UK

Place of Origin:UK

... A Vds - Drain-Source Breakdown Voltage: 70 V Operating Frequency: 175 MHz Gain: 13 dB Output Power: 300 W Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: DR Brand: Semelab / TT ...

Model Number:FDMQ8203

Place of Origin:America

Brand Name:ON

...MOSFET 2N/2P-CH 100V/80V 12-MLP Original Mosfet Transistor Products Description: 1. FDMQ8203 dual-channel FET, MOSFET, N and P channels, 6 A, 100 V, 0.085 OHM, 10 V, 3 V 2. His Quad MOSFET Solution provides for a promise that provides a ten-fold improvement in the Power Dissipation over Diode Bridge. 3.High-Efficiency Bridge Rectifiers Technological Parameters: Polarity N - Channel dissipated power...